advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 600v small package outline r ds(on) 72 surface mount device i d 51ma halogen free & rohs compliant product description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 ma i d @t a =70 ma i d @t a =70 ma i dm ma p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 250 /w data and specifications subject to change without notice AP2332GEN-HF 201212131 halogen-free product 0.5 -55 to 150 parameter rating drain-source voltage 600 continuous drain current 3 , v gs @ 10v 41 pulsed drain current 1 300 gate-source voltage + 32 continuous drain current 3 , v gs @ 10v 51 continuous drain current 4 , v gs @ 10v 68 parameter 1 operating junction temperature range -55 to 150 thermal data storage temperature range total power dissipation d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the special design sot-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 600 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =60ma - - 72 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =60ma - 110 - ms i dss drain-source leakage current v ds =480v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 32v, v ds =0v - - + 30 ua q g total gate charge 2 i d =0.1a - 2 3.2 nc q gs gate-source charge v ds =200v - 1 - nc q gd gate-drain ("miller") charge v gs =10v - 0.3 - nc t d(on) turn-on delay time 2 v ds =300v - 10 - ns t r rise time i d =60ma - 7 - ns t d(off) turn-off delay time r g =3.3 -15- ns t f fall time v gs =10v - 70 - ns c iss input capacitance v gs =0v - 40 64 pf c oss output capacitance v ds =25v - 13.5 - pf c rss reverse transfer capacitance f=1.0mhz - 3.5 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.05a, v gs =0v - - 1.5 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP2332GEN-HF 3.mounted on min. copper pad fr4 board 4.mounted on 1 in 2 copper pad fr4 board t < 10s thermal resistance.
a p2332gen-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =60ma v g =10v 0.0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 40 50 60 02468 v ds , drain-to-source voltage (v) i d , drain current (ma) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 10 20 30 40 0.0 2.0 4.0 6.0 8.0 10.0 v ds , drain-to-source voltage (v) i d , drain current (ma) t a = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.8 0.9 1 1.1 1.2 1.3 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =250ua i d =1ma
AP2332GEN-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain fig 12. gate charge circuit current v.s. ambient temperature 4 0 20 40 60 80 100 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2 2.4 2.8 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =0.1a v ds =200v q v g 10v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 250 /w t t 0.02 0.0001 0.001 0.01 0.1 1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) 0 20 40 60 80 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (ma)
|
